The crystals of barium ftoride are widely used in the capacity of the substrates for the epitaxial growth of compounds IV-VI seeing that of the uniqueness of the types of their crystal lattices and the nearness of the lattice constants. The epitaxy from the gas and liquid phases is usually carried out at the temperatures 300-500 C [1]. The activation of the structure-sensitive properties at such temperatures can influence on the perfection of the epitaxial layers and the state of the heteroboundary between them in the result of the borrowing of the defects from the substrates of BaF2. The similar situation can appear at the use of BaF2 in the capacity of buffer layers at the creation of the multilayered structures also. physics.gov.az alanından [PDF]